Wetting of GaN islands by excess Ga: Origin of different appearances of GaN islands in scanning tunneling microscopy

Journal Article · Tue May 15 00:00:00 EDT 2007 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.75.205310· OSTI ID:21045876

Hao, Zheng ^[1]; Xie, M H; Wu, H S ^[1]; Xue, Q K ^[2]

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1. Physics Department, University of Hong Kong, Pokfulam Road, Hong Kong (China)
2. Institute of Physics, Chinese Academy of Sciences, Beijing (China)

We observe three different kinds of islands, namely the 'bare', 'ghost', and 'normal' islands, by scanning tunneling microscopy of GaN(0001) prepared under Ga-rich conditions with different excess Ga coverage. They correlate to three different growth regimes. The various morphologies of the islands are suggested to be due to different states of wetting of the surface by excess Ga. The dynamical behavior of the wetting process is followed, and an island size dependence of Ga wetting is noted.

• OSTI ID: 21045876
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 75, Issue 20; Other Information: DOI: 10.1103/PhysRevB.75.205310; (c) 2007 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
GALLIUM
GALLIUM NITRIDES
LAYERS
MOLECULAR BEAM EPITAXY
MORPHOLOGY
SCANNING TUNNELING MICROSCOPY
SEMICONDUCTOR MATERIALS
SURFACE ENERGY
SURFACES