Surface structure analysis of atomically smooth BaBiO{sub 3} Films
Journal Article
·
· Physical Review. B, Condensed Matter and Materials Physics
- Brookhaven National Laboratory, Upton, New York 11973-5000 (United States)
Using low-energy time-of-flight scattering and recoil spectroscopy (TOFSARS) and mass spectroscopy of recoiled ions (MSRI) we analyze the surface structure of an atomically smooth BaBiO{sub 3} film grown by molecular beam epitaxy. We demonstrate high sensitivity of the TOFSARS and MSRI spectra to slight changes in the orientation of the ion scattering plane with respect to the crystallographic axes. The observed angle dependence allows us to clearly identify the termination layer as BiO{sub 2}. Our data also indicate that angle-resolved MSRI data can be used for high-resolution studies of the surface structure of complex oxide thin films.
- OSTI ID:
- 21045872
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 75, Issue 20; Other Information: DOI: 10.1103/PhysRevB.75.201402; (c) 2007 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
Similar Records
In-situ, real-time, studies of film growth processes using ion scattering and direct recoil spectroscopy techniques.
TOF-LEIS characterization and growth of GaN thin films grown with ECR and NH{sub 3}
Surface analysis at low to ultrahigh vacuum by ion scattering and direct recoil spectroscopy
Conference
·
Thu Apr 22 00:00:00 EDT 1999
·
OSTI ID:21045872
TOF-LEIS characterization and growth of GaN thin films grown with ECR and NH{sub 3}
Book
·
Wed Dec 31 00:00:00 EST 1997
·
OSTI ID:21045872
+2 more
Surface analysis at low to ultrahigh vacuum by ion scattering and direct recoil spectroscopy
Journal Article
·
Mon May 01 00:00:00 EDT 1995
· Journal of Vacuum Science and Technology, A
·
OSTI ID:21045872