Stress evolution and defect diffusion in Cu during low energy ion irradiation: Experiments and modeling

Journal Article · Tue Jan 15 00:00:00 EST 2008 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.2812432· OSTI ID:21020903

Chan, W L; Chason, Eric ^[1]

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1. Division of Engineering, Brown University, Providence, Rhode Island 02912 (United States)

Measurements of stress generation in Cu during low energy ion irradiation show that the induced stress depends on temperature and ion flux. A steady-state compressive stress is observed during irradiation, which turns into tensile stress after the irradiation is stopped. The results cannot be explained by the incorporation of gas ions alone, and point defects generated by the ions must be considered. In this work, the authors develop a continuum model that includes ion implantation, sputtering, and defect diffusion to explain the experimental data. The authors show that the experimental results can be reproduced primarily by considering a difference in diffusivity between interstitials and vacancies.

• OSTI ID: 21020903
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 26, Issue 1; Other Information: DOI: 10.1116/1.2812432; (c) 2008 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COMPRESSION STRENGTH
COPPER
CRYSTALS
DEFECTS
DIFFUSION
INTERSTITIALS
ION BEAMS
ION IMPLANTATION
IONS
IRRADIATION
SIMULATION
SPUTTERING
STEADY-STATE CONDITIONS
STRESSES
TENSILE PROPERTIES
VACANCIES