The {alpha}-particle excited scintillation response of the liquid phase epitaxy grown LuAG:Ce thin films

Journal Article · Mon Jan 28 00:00:00 EST 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2835458· OSTI ID:21016301

Prusa, P; Cechak, T; Mares, J A; Nikl, M; Beitlerova, A; Solovieva, N; Zorenko, Yu V; Gorbenko, V I; Tous, J; Blazek, K ^[1]

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1. Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague, Brehova 7, 11519 Prague (Czech Republic)

Liquid phase epitaxy grown Lu{sub 3}Al{sub 5}O{sub 12}:Ce (LuAG:Ce) 20 {mu}m thick films and plate cut from the bulk Czochralski-grown LuAG:Ce crystal were prepared for comparison of photoelectron yield (PhY) and PhY dependence on shaping time (0.5-10 {mu}s). {sup 241}Am ({alpha} particles) was used for excitation. At the 0.5 {mu}s shaping time, the best film shows comparable PhY with the bulk sample. PhY of bulk material increases noticeably more with shaping time than that of the films. Energy resolution of films is better. Influence of Pb{sup 2+} contamination in the films (from the flux) and antisite Lu{sub Al} defect in bulk material is discussed.

• OSTI ID: 21016301
• Journal Information: Applied Physics Letters, Vol. 92, Issue 4; Other Information: DOI: 10.1063/1.2835458; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALPHA PARTICLES
ALUMINATES
AMERICIUM 241
CERIUM
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTALS
ENERGY RESOLUTION
LEAD IONS
LIQUID PHASE EPITAXY
LUTETIUM COMPOUNDS
SCINTILLATIONS
THIN FILMS