Laser activation of ferromagnetism in hydrogenated Ga{sub 1-x}Mn{sub x}As
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States) and Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
We demonstrate the local depassivation of hydrogenated Ga{sub 1-x}Mn{sub x}As by pulsed-laser annealing. The controlled removal of Mn-H defect complexes, which form upon hydrogenation and render Mn acceptors inactive, is achieved by focused laser irradiation. As a result, regions of electrically and ferromagnetically active Ga{sub 1-x}Mn{sub x}As are formed within a nonactive, otherwise structurally identical film. The hydrogenated films subjected to blanket laser depassivation display a Curie temperature T{sub C} up to 60 K, or 60% of the T{sub C} of the as-grown films. These results demonstrate the direct laser writing of mesoscopic ferromagnetically active regions as a viable route for the realization of planar, nanoscale spintronic systems.
- OSTI ID:
- 21016262
- Journal Information:
- Applied Physics Letters, Vol. 92, Issue 1; Other Information: DOI: 10.1063/1.2824833; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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