skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Enhanced photoelectrochemical responses of ZnO films through Ga and N codoping

Abstract

We report on the crystallinity and photoelectrochemical (PEC) response of ZnO thin films codoped by Ga and N. The ZnO:(Ga,N) thin films were deposited by cosputtering at room temperature and followed by postannealing at 500 deg. C in air for 2 h. We found that ZnO:(Ga,N) thin films exhibited significantly enhanced crystallinity compared to ZnO doped solely with N at the same growth conditions. Furthermore, ZnO:(Ga,N) thin films exhibited enhanced N incorporation over ZnO doped solely with N at high temperatures. As a result, ZnO:(Ga,N) thin films achieved dramatically improved PEC response, compared to ZnO thin films doped solely with N at any conditions. Our results suggest a general way to improve PEC response for wide-band-gap oxides.

Authors:
; ; ; ; ;  [1]
  1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
Publication Date:
OSTI Identifier:
21016197
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 91; Journal Issue: 23; Other Information: DOI: 10.1063/1.2822440; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AIR; ANNEALING; CRYSTAL GROWTH; DEPOSITION; DOPED MATERIALS; GALLIUM; NITROGEN; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; ZINC OXIDES

Citation Formats

Ahn, Kwang-Soon, Yan, Yanfa, Shet, Sudhakar, Deutsch, Todd, Turner, John, and Al-Jassim, Mowafak. Enhanced photoelectrochemical responses of ZnO films through Ga and N codoping. United States: N. p., 2007. Web. doi:10.1063/1.2822440.
Ahn, Kwang-Soon, Yan, Yanfa, Shet, Sudhakar, Deutsch, Todd, Turner, John, & Al-Jassim, Mowafak. Enhanced photoelectrochemical responses of ZnO films through Ga and N codoping. United States. https://doi.org/10.1063/1.2822440
Ahn, Kwang-Soon, Yan, Yanfa, Shet, Sudhakar, Deutsch, Todd, Turner, John, and Al-Jassim, Mowafak. 2007. "Enhanced photoelectrochemical responses of ZnO films through Ga and N codoping". United States. https://doi.org/10.1063/1.2822440.
@article{osti_21016197,
title = {Enhanced photoelectrochemical responses of ZnO films through Ga and N codoping},
author = {Ahn, Kwang-Soon and Yan, Yanfa and Shet, Sudhakar and Deutsch, Todd and Turner, John and Al-Jassim, Mowafak},
abstractNote = {We report on the crystallinity and photoelectrochemical (PEC) response of ZnO thin films codoped by Ga and N. The ZnO:(Ga,N) thin films were deposited by cosputtering at room temperature and followed by postannealing at 500 deg. C in air for 2 h. We found that ZnO:(Ga,N) thin films exhibited significantly enhanced crystallinity compared to ZnO doped solely with N at the same growth conditions. Furthermore, ZnO:(Ga,N) thin films exhibited enhanced N incorporation over ZnO doped solely with N at high temperatures. As a result, ZnO:(Ga,N) thin films achieved dramatically improved PEC response, compared to ZnO thin films doped solely with N at any conditions. Our results suggest a general way to improve PEC response for wide-band-gap oxides.},
doi = {10.1063/1.2822440},
url = {https://www.osti.gov/biblio/21016197}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 23,
volume = 91,
place = {United States},
year = {Mon Dec 03 00:00:00 EST 2007},
month = {Mon Dec 03 00:00:00 EST 2007}
}