Axial and radial growth of Ni-induced GaN nanowires
Abstract
GaN nanowires (NWs) were grown on sapphire by molecular beam epitaxy. NWs form only in the presence of Ni seed particles and only under N-rich conditions. Their length increases linearly with growth time up to about 7.5 {mu}m while their diameter remains almost constant. In contrast, a switch to Ga-rich conditions after NW formation results in radial growth, i.e., the NW diameter increases while lengthening is negligible. These results corroborate the fact that the growth of III-V NWs is governed by the accumulation of group-III atoms in the seeds, while group-V species are not preferentially incorporated at the seeds.
- Authors:
-
- Qimonda, 81730 Munich, Germany and NaMLab, 01099 Dresden (Germany)
- Publication Date:
- OSTI Identifier:
- 21016122
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 91; Journal Issue: 9; Other Information: DOI: 10.1063/1.2776979; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; CRYSTAL GROWTH; GALLIUM NITRIDES; MOLECULAR BEAM EPITAXY; NICKEL; PARTICLES; QUANTUM WIRES; SAPPHIRE; SEMICONDUCTOR MATERIALS
Citation Formats
Geelhaar, L, Cheze, C, Weber, W M, Averbeck, R, Riechert, H, Kehagias, Th, Komninou, Ph, Dimitrakopulos, G P, Karakostas, Th, and Physics Department, Aristotle University, 541 24 Thessaloniki. Axial and radial growth of Ni-induced GaN nanowires. United States: N. p., 2007.
Web. doi:10.1063/1.2776979.
Geelhaar, L, Cheze, C, Weber, W M, Averbeck, R, Riechert, H, Kehagias, Th, Komninou, Ph, Dimitrakopulos, G P, Karakostas, Th, & Physics Department, Aristotle University, 541 24 Thessaloniki. Axial and radial growth of Ni-induced GaN nanowires. United States. https://doi.org/10.1063/1.2776979
Geelhaar, L, Cheze, C, Weber, W M, Averbeck, R, Riechert, H, Kehagias, Th, Komninou, Ph, Dimitrakopulos, G P, Karakostas, Th, and Physics Department, Aristotle University, 541 24 Thessaloniki. 2007.
"Axial and radial growth of Ni-induced GaN nanowires". United States. https://doi.org/10.1063/1.2776979.
@article{osti_21016122,
title = {Axial and radial growth of Ni-induced GaN nanowires},
author = {Geelhaar, L and Cheze, C and Weber, W M and Averbeck, R and Riechert, H and Kehagias, Th and Komninou, Ph and Dimitrakopulos, G P and Karakostas, Th and Physics Department, Aristotle University, 541 24 Thessaloniki},
abstractNote = {GaN nanowires (NWs) were grown on sapphire by molecular beam epitaxy. NWs form only in the presence of Ni seed particles and only under N-rich conditions. Their length increases linearly with growth time up to about 7.5 {mu}m while their diameter remains almost constant. In contrast, a switch to Ga-rich conditions after NW formation results in radial growth, i.e., the NW diameter increases while lengthening is negligible. These results corroborate the fact that the growth of III-V NWs is governed by the accumulation of group-III atoms in the seeds, while group-V species are not preferentially incorporated at the seeds.},
doi = {10.1063/1.2776979},
url = {https://www.osti.gov/biblio/21016122},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 9,
volume = 91,
place = {United States},
year = {Mon Aug 27 00:00:00 EDT 2007},
month = {Mon Aug 27 00:00:00 EDT 2007}
}
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