Correlating electrical resistance to growth conditions for multiwalled carbon nanotubes

Journal Article · Mon Aug 27 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2776022· OSTI ID:21016119

Lan, Chun; Amama, Placidus B; Fisher, Timothy S; Reifenberger, Ronald G ^[1]

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1. Department of Physics, Purdue University, West Lafayette, Indiana 47907 and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States)

A correlation between growth temperature and electrical resistance of multiwalled carbon nanotubes (MWNTs) has been established by measuring the resistance of individual MWNTs grown by microwave plasma-enhanced chemical vapor deposition (PECVD) at 800, 900, and 950 deg. C. The lowest resistances were obtained mainly from MWNTs grown at 900 deg. C. The MWNT resistance is larger on average at lower (800 deg. C) and higher (950 deg. C) growth temperatures. The resistance of MWNTs correlated well with other MWNT quality indices obtained from Raman spectra. This study identifies a temperature window for growing higher-quality MWNTs with fewer defects and lower resistance by PECVD.

• OSTI ID: 21016119
• Journal Information: Applied Physics Letters, Vol. 91, Issue 9; Other Information: DOI: 10.1063/1.2776022; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARBON
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
ELECTRIC CONDUCTIVITY
MICROWAVE RADIATION
NANOTUBES
RAMAN SPECTRA
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 1000-4000 K