Implantation-induced nonequilibrium reaction between Zn ions of 60 keV and SiO{sub 2} target
- National Institute for Materials Science, 3-13 Sakura, Tsukuba, Ibaraki 305-0003 (Japan)
Silica glass (SiO{sub 2}) was implanted with 60 keV Zn{sup +} ions to a fluence of 1.0x10{sup 17} ions/cm{sup 2}, and the chemical states were investigated along the depth in as-implanted state by x-ray excited Auger electron spectroscopy and x-ray photoelectron spectroscopy. The metallic Zn and Zn{sub 2}SiO{sub 4} phases were found to have, respectively, formed in the shallow and deep regions of the SiO{sub 2}, whereas thermodynamics predicts the Zn phase only. Oxygen atoms in SiO{sub 2} are preferentially displaced to the deeper region because of the lighter mass. The excess oxygen in the deep region and athermal energy from the implantation drive the formation of Zn{sub 2}SiO{sub 4}.
- OSTI ID:
- 21016093
- Journal Information:
- Applied Physics Letters, Vol. 91, Issue 6; Other Information: DOI: 10.1063/1.2768004; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Embedment of ZnO nanoparticles in SiO{sub 2} by ion implantation and low-temperature oxidation
Order-of-magnitude differences in retention of low-energy Ar implanted in Si and SiO{sub 2}
Fabrication of ZnO nanoparticles in SiO{sub 2} by ion implantation combined with thermal oxidation
Journal Article
·
Mon Feb 19 00:00:00 EST 2007
· Applied Physics Letters
·
OSTI ID:21016093
+3 more
Order-of-magnitude differences in retention of low-energy Ar implanted in Si and SiO{sub 2}
Journal Article
·
Thu Sep 15 00:00:00 EDT 2016
· Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
·
OSTI ID:21016093
+1 more
Fabrication of ZnO nanoparticles in SiO{sub 2} by ion implantation combined with thermal oxidation
Journal Article
·
Mon Jul 04 00:00:00 EDT 2005
· Applied Physics Letters
·
OSTI ID:21016093
+2 more