Electron-ion recombination of Si IV forming Si III: Storage-ring measurement and multiconfiguration Dirac-Fock calculations
- Institut fuer Atom- und Molekuelphysik, Justus-Liebig-Universitaet, Leihgesterner Weg 217, 35392 Giessen (Germany)
The electron-ion recombination rate coefficient for Si IV forming Si III was measured at the heavy-ion storage-ring TSR. The experimental electron-ion collision energy range of 0-186 eV encompassed the 2p{sup 6}nln{sup '}l{sup '} dielectronic recombination (DR) resonances associated with 3s{yields}nl core excitations, 2s2p{sup 6}3snln{sup '}l{sup '} resonances associated with 2s{yields}nl (n=3,4) core excitations, and 2p{sup 5}3snln{sup '}l{sup '} resonances associated with 2p{yields}nl (n=3,...,{infinity}) core excitations. The experimental DR results are compared with theoretical calculations using the multiconfiguration Dirac-Fock (MCDF) method for DR via the 3s{yields}3pn{sup '}l{sup '} and 3s{yields}3dn{sup '}l{sup '}(both n{sup '}=3,...,6) and 2p{sup 5}3s3ln{sup '}l{sup '} (n{sup '}=3,4) capture channels. Finally, the experimental and theoretical plasma DR rate coefficients for Si IV forming Si III are derived and compared with previously available results.
- OSTI ID:
- 21015988
- Journal Information:
- Physical Review. A, Vol. 76, Issue 3; Other Information: DOI: 10.1103/PhysRevA.76.032717; (c) 2007 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1050-2947
- Country of Publication:
- United States
- Language:
- English
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