Femtosecond laser damage threshold and nonlinear characterization in bulk transparent SiC materials
Journal Article
·
· Journal of the Optical Society of America. Part B, Optical Physics
- AT and T Government Solutions, Dayton, Ohio 45433 (United States)
- Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, Ohio 45433 (United States)
- General Dynamics Information Tech, Dayton, Ohio 45431 (United States)
- University of Dayton, Dayton, Ohio 45469 (United States)
Semi-insulating and conducting SiC crystalline transparent substrates were studied after being processed by femtosecond (fs) laser radiation (780 nm at 160 fs). Z-scan and damage threshold experiments were performed on both SiC bulk materials to determine each sample's nonlinear and threshold parameters. 'Damage' in this text refers to an index of refraction modification as observed visually under an optical microscope. In addition, a study was performed to understand the damage threshold as a function of numerical aperture. Presented here for the first time, to the best of our knowledge, are the damage threshold, nonlinear index of refraction, and nonlinear absorption measured values.
- OSTI ID:
- 21013804
- Journal Information:
- Journal of the Optical Society of America. Part B, Optical Physics, Vol. 25, Issue 1; Other Information: DOI: 10.1364/JOSAB.25.000060; (c) 2008 Optical Society of America; Country of input: International Atomic Energy Agency (IAEA); ISSN 0740-3224
- Country of Publication:
- United States
- Language:
- English
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