Controlling line-edge roughness and reactive ion etch lag in sub-150 nm features in borophosphosilicate glass

Journal Article · Sun Apr 01 00:00:00 EDT 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2717141· OSTI ID:20982809

Bhatnagar, Parijat; Panda, Siddhartha; Edleman, Nikki L; Allen, Scott D; Wise, Richard; Mahorowala, Arpan ^[1]

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1. Department of Biomedical Engineering, Cornell University, Ithaca, New York 14853 (United States)

We have developed a reactive ion etch (RIE) process in borophosphosilicate glass (BPSG) for 150 nm line-and-space features, where line-edge roughness (LER) complemented with RIE lag becomes a major issue. Effect of flow rates and carbon-to-fluorine atomic ratio of fluorohydrocarbon gases was utilized to achieve acceptable process window allowing lower radio frequency powers therefore obtaining acceptable LER and RIE lag in the high-resolution features etched into BPSG.

• OSTI ID: 20982809
• Journal Information: Journal of Applied Physics, Vol. 101, Issue 7; Other Information: DOI: 10.1063/1.2717141; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BOROSILICATE GLASS
CARBON
ETCHING
FLOW RATE
FLUORINE
RADIOWAVE RADIATION
ROUGHNESS