Floating probe for electron temperature and ion density measurement applicable to processing plasmas

Lee, Min-Hyong; Jang, Sung-Ho; Chung, Chin-Wook

doi:10.1063/1.2204352

Title: Floating probe for electron temperature and ion density measurement applicable to processing plasmas

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Abstract

A floating-type probe and its driving circuit using the nonlinear characteristics of the probe sheath was developed and the electron temperature and the plasma density which is found from the ion part of the probe characteristic (ion density) were measured in inductively coupled plasmas. The floating-type probe was compared with a single Langmuir probe and it turned out that the floating-type probe agrees closely with the single probe at various rf powers and pressures. The ion density and electron temperature by the floating-type probe were measured with a film on the probe tip coated in CF{sub 4} plasma. It is found that the ion density and electron temperature by the floating-type probe were almost the same regardless of the coating on the probe tip while a single Langmuir probe does not work. Because the floating-type probe is hardly affected by the deposition on the probe tip, it is expected to be applied to plasma diagnostics for plasma processing such as deposition or etching.

Authors:

Lee, Min-Hyong; Jang, Sung-Ho; Chung, Chin-Wook ^[1]

Department of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of)

Publication Date:: Thu Feb 01 00:00:00 EST 2007

OSTI Identifier:: 20982666

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 101; Journal Issue: 3; Other Information: DOI: 10.1063/1.2204352; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 70 PLASMA PHYSICS AND FUSION TECHNOLOGY; CARBON TETRAFLUORIDE; DEPOSITION; ELECTRON TEMPERATURE; ETCHING; ION DENSITY; ION TEMPERATURE; LANGMUIR PROBE; NONLINEAR PROBLEMS; PLASMA; PLASMA DENSITY; PLASMA DIAGNOSTICS; PLASMA SHEATH; THIN FILMS

Citation Formats


                    Lee, Min-Hyong, Jang, Sung-Ho, and Chung, Chin-Wook. Floating probe for electron temperature and ion density measurement applicable to processing plasmas.  United States: N. p., 2007. 
        Web.  doi:10.1063/1.2204352.

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                    Lee, Min-Hyong, Jang, Sung-Ho, & Chung, Chin-Wook. Floating probe for electron temperature and ion density measurement applicable to processing plasmas.  United States.  https://doi.org/10.1063/1.2204352

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                    Lee, Min-Hyong, Jang, Sung-Ho, and Chung, Chin-Wook. 2007.  
        "Floating probe for electron temperature and ion density measurement applicable to processing plasmas".  United States.  https://doi.org/10.1063/1.2204352.

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@article{osti_20982666,

  title        = {Floating probe for electron temperature and ion density measurement applicable to processing plasmas},

  author       = {Lee, Min-Hyong and Jang, Sung-Ho and Chung, Chin-Wook},

  abstractNote = {A floating-type probe and its driving circuit using the nonlinear characteristics of the probe sheath was developed and the electron temperature and the plasma density which is found from the ion part of the probe characteristic (ion density) were measured in inductively coupled plasmas. The floating-type probe was compared with a single Langmuir probe and it turned out that the floating-type probe agrees closely with the single probe at various rf powers and pressures. The ion density and electron temperature by the floating-type probe were measured with a film on the probe tip coated in CF{sub 4} plasma. It is found that the ion density and electron temperature by the floating-type probe were almost the same regardless of the coating on the probe tip while a single Langmuir probe does not work. Because the floating-type probe is hardly affected by the deposition on the probe tip, it is expected to be applied to plasma diagnostics for plasma processing such as deposition or etching.},

  doi          = {10.1063/1.2204352},

  url          = {https://www.osti.gov/biblio/20982666},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 3,

  volume       = 101,

  place        = {United States},

  year         = {Thu Feb 01 00:00:00 EST 2007},

  month        = {Thu Feb 01 00:00:00 EST 2007}

}

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