Production of energetic ions in plasma by ambipolar fields: Application to etching

Journal Article · Sun Jul 15 00:00:00 EDT 2007 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.2743647· OSTI ID:20979490

Park, Wontaek; Tolmachev, Yu N; Volynets, V N; Pashkovskiy, V G ^[1]

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1. Mechatronics and Manufacturing Technology Center, Samsung Electronics Co., 416 Maetan3-Dong, Yeongtong-Ku, Suwon-City 443-742 (Korea, Republic of)

A plasma accelerator based on inductively coupled plasma source, which is able to produce an axially directed flux of accelerated ions onto the wafer without applying the bias voltage, has been studied and utilized in a semiconductor etch process. Ion kinetic energies up to 60 eV have been measured for an absorbed power of about 800 W, while the plasma density was {approx}10{sup 10} cm{sup -3} at the plasma source exit. The experimental results show that the plasma accelerator can be used for an anisotropic etch process without the radio-frequency bias of the substrate.

• OSTI ID: 20979490
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 25, Issue 4; Other Information: DOI: 10.1116/1.2743647; (c) 2007 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

70 PLASMA PHYSICS AND FUSION TECHNOLOGY
ANISOTROPY
ETCHING
EV RANGE 10-100
KINETIC ENERGY
PLASMA
PLASMA DENSITY
PLASMA GUNS
RADIOWAVE RADIATION
SEMICONDUCTOR MATERIALS
SUBSTRATES
TAIL IONS