Measurement and modeling of time- and spatial-resolved wafer surface temperature in inductively coupled plasmas
- Department of Chemical Engineering, University of California at Berkeley, Berkeley, California 94720 (United States)
The transient temperature profile across a commercial wafer temperature sensor device in an inductively coupled Ar plasma is reported. The measured temperatures are compared to model predictions, based on a coupled plasma-wafer model. The radial temperature profile is the result of the radial profile in the ion energy flux. The ion energy flux profile is obtained by combining the Langmuir probe measurement, the ion wall flux probe measurement, and a plasma model. A methodology to estimate the ion flux profile using the sensor measurements has been validated by combining the plasma measurements, the wafer temperature measurements, and the plasma-wafer model. It is shown that with minimal heat transfer between the wafer and the chuck, the initial transient wafer temperature profile after plasma ignition can be used to estimate the ion energy flux profile across the wafer.
- OSTI ID:
- 20979375
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 25, Issue 3; Other Information: DOI: 10.1116/1.2731369; (c) 2007 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
Similar Records
Quantitative determination of mass-resolved ion densities in H{sub 2}-Ar inductively coupled radio frequency plasmas
A spatially resolved retarding field energy analyzer design suitable for uniformity analysis across the surface of a semiconductor wafer