Low-temperature method for enhancing sputter-deposited HfO{sub 2} films with complete oxidization

Journal Article · Mon Jul 02 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2753762· OSTI ID:20971998

Tsai, C -T; Chang, T -C; Liu, P -T; Yang, P -Y; Kuo, Y -C; Kin, K -T; Chang, P -L; Huang, F -S ^[1]

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1. Institute of Electronics Engineering, National Tsing Hua University, HsinChu 300, Taiwan (China)

A low-temperature method, supercritical CO{sub 2} fluid (SCF) technology, is proposed to improve the dielectric properties of ultrathin hafnium oxide (HfO{sub 2}) film at 150 deg. C without significant formation of parasitic oxide at the interface between HfO{sub 2} and Si substrate. In this research, the HfO{sub 2} films were deposited by dc sputter at room temperature and post-treated by SCF which is mixed with 5 vol % propyl alcohol and 5 vol % H{sub 2}O. From high-resolution transmission electron microscopy image, the interfacial oxide of SCF-treated HfO{sub 2} film is only 5 A ring thick. Additionally, the enhancements in the qualities of sputter-deposited HfO{sub 2} film after SCF process are exhibited by x-ray photoelectron spectroscopy and capacitance-voltage (C-V) measurement.

• OSTI ID: 20971998
• Journal Information: Applied Physics Letters, Vol. 91, Issue 1; Other Information: DOI: 10.1063/1.2753762; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAPACITANCE
CARBON DIOXIDE
DEPOSITION
DIELECTRIC MATERIALS
DIELECTRIC PROPERTIES
ELECTRIC POTENTIAL
HAFNIUM OXIDES
INTERFACES
OXIDATION
PROPANOLS
SPUTTERING
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
WATER
X-RAY PHOTOELECTRON SPECTROSCOPY