Mechanism for radiative recombination in ZnCdO alloys

Journal Article · Mon Jun 25 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2751589· OSTI ID:20971984

Buyanova, I A; Bergman, J P; Pozina, G; Chen, W M; Rawal, S; Norton, D P; Pearton, S J; Osinsky, A; Dong, J W ^[1]

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1. Department of Physics, Chemistry and Biology, Linkoeping University, S-581 83 Linkoeping (Sweden)

Temperature dependent cw- and time-resolved photoluminescence combined with absorption measurements are employed to evaluate the origin of radiative recombination in ZnCdO alloys grown by molecular-beam epitaxy. The near-band-edge emission is attributed to recombination of excitons localized within band tail states likely caused by nonuniformity in Cd distribution. Energy transfer between the tail states is argued to occur via tunneling of localized excitons. The transfer is shown to be facilitated by increasing Cd content due to a reduction of the exciton binding energy and, therefore, an increase of the exciton Bohr radius in the alloys with a high Cd content.

• OSTI ID: 20971984
• Journal Information: Applied Physics Letters, Vol. 90, Issue 26; Other Information: DOI: 10.1063/1.2751589; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
BINDING ENERGY
CADMIUM ALLOYS
CRYSTAL GROWTH
ENERGY TRANSFER
EXCITONS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
RECOMBINATION
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TIME RESOLUTION
TUNNEL EFFECT
ZINC ALLOYS