Faceting during GaAs quantum dot self-assembly by droplet epitaxy
- Institut fuer Angewandte Physik und Zentrum fuer Mikrostrukturforschung, Jungiusstrasse 11, D-20355 Hamburg (Germany)
Strain-free GaAs quantum dots (QDs) are grown in a self-assembled fashion by applying Ga droplet epitaxy. The QDs are studied using electron diffraction and atomic force microscopy. Two distinct regimes are observed for the QD shape. QDs whose volume exceeds approximately 3x10{sup 5} Ga atoms are shaped like truncated pyramids with side facets having an angle of about 55 deg. . Smaller QDs are pyramidlike with 25 deg. facets.
- OSTI ID:
- 20971931
- Journal Information:
- Applied Physics Letters, Vol. 90, Issue 20; Other Information: DOI: 10.1063/1.2737123; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Regimes of GaAs quantum dot self-assembly by droplet epitaxy
Excitation Power Dependence Of Photoluminescence From GaAs Quantum Dot Prepared By Droplet Epitaxy Method
Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition
Journal Article
·
Wed Aug 15 00:00:00 EDT 2007
· Physical Review. B, Condensed Matter and Materials Physics
·
OSTI ID:20971931
+3 more
Excitation Power Dependence Of Photoluminescence From GaAs Quantum Dot Prepared By Droplet Epitaxy Method
Journal Article
·
Fri Dec 23 00:00:00 EST 2011
· AIP Conference Proceedings
·
OSTI ID:20971931
+10 more
Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition
Journal Article
·
Mon Jan 13 00:00:00 EST 2014
· Applied Physics Letters
·
OSTI ID:20971931
+5 more