Binary-collision modeling of ion-induced stress relaxation in cubic BN and amorphous C thin films

Journal Article · Mon Apr 30 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2734472· OSTI ID:20971898

Abendroth, B; Jaeger, H U; Moeller, W; Bilek, M ^[1]

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1. Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, D-01314 (Germany)

It is demonstrated that ion-bombardment-induced stress release during physical vapor deposition of cubic boron nitride (cBN) and amorphous carbon (aC) films is related to collisional relocation of atoms. A model based on TRIM and molecular dynamics computer simulations is presented. Experimental results obtained using pulsed substrate bias are in good agreement with the model predictions at adequately chosen threshold energies of atomic relocation. The collisional relaxation model describes the experimental data significantly better than the widely applied thermal spike model.

• OSTI ID: 20971898
• Journal Information: Applied Physics Letters, Vol. 90, Issue 18; Other Information: DOI: 10.1063/1.2734472; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
BORON NITRIDES
CARBON
COMPUTERIZED SIMULATION
EXPERIMENTAL DATA
ION BEAMS
MOLECULAR DYNAMICS METHOD
PHYSICAL VAPOR DEPOSITION
SEMICONDUCTOR MATERIALS
STRESS RELAXATION
STRESSES
SUBSTRATES
THERMAL SPIKES
THIN FILMS
THRESHOLD ENERGY