Critical film thickness dependence on As flux in In{sub 0.27}Ga{sub 0.73}As/GaAs(001) films
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)
The transition between planar and nonplanar growth is examined for compressively strained In{sub 0.27}Ga{sub 0.73}As/GaAs(001) films using reflection high energy electron diffraction, atomic force microscopy, and scanning tunneling microscopy (STM). For a narrow range of temperature and composition, the critical thickness (t{sub SK}) is strongly dependent on As flux. For high values of As flux, t{sub SK} increases by more than a factor of 2. The morphology of three-dimensional islands formed during the initial stages of nonplanar growth is also characterized by high resolution STM.
- OSTI ID:
- 20971854
- Journal Information:
- Applied Physics Letters, Vol. 90, Issue 9; Other Information: DOI: 10.1063/1.2476259; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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