Development of a high-efficiency high-resolution particle-induced x-ray emission system for chemical state analysis of environmental samples
- Research Laboratory for Nuclear Reactors, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550 (Japan)
We have developed a high-efficiency high-resolution particle-induced x-ray emission (PIXE) system employing a von Hamos-type crystal spectrometer for a chemical state identification of trace elements in environmental samples. The energy resolution of the system was determined to be about 0.05% through the observation of Si K{alpha}{sub 1,2} x rays (1.74 keV) from elemental silicon. The throughput efficiency of the system was also evaluated quasitheoretically to be 1.6x10{sup -7} counts/incident proton for Si K{alpha}{sub 1,2} emission. To demonstrate a chemical state analysis using the high-resolution PIXE system, Si K{alpha}{sub 1,2} and K{beta} x-ray spectra for SiC, Si{sub 3}N{sub 4}, and SiO{sub 2} were measured and compared. The observed chemical shifts of the Si K{alpha}{sub 1,2} peaks for SiC, Si{sub 3}N{sub 4}, and SiO{sub 2} relative to elemental silicon were 0.20, 0.40, and 0.55 eV, respectively. The tendency of these shifts were well explained by the effective charges of the silicon atoms calculated by a molecular orbital method.
- OSTI ID:
- 20953524
- Journal Information:
- Review of Scientific Instruments, Vol. 78, Issue 7; Other Information: DOI: 10.1063/1.2756623; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
- Country of Publication:
- United States
- Language:
- English
Similar Records
Advances in high-resolution studies of the chemical effects in the molybdenum L heavy-ion-induced x-ray satellite emission (HIXSE) spectra
Chemical bonding of oxygen in intergranular amorphous layers in high-purity {beta}-SiC ceramics