skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Crystal growth and characterization of Yb{sup 3+}-doped Gd{sub 3}Ga{sub 5}O{sub 12}

Journal Article · · Materials Research Bulletin
 [1];  [1];  [2];  [3];  [2];  [1];  [1];  [3];  [1]
  1. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan)
  2. Materials Science and Engineering, Ibaraki University, Hitachi 316-8511 (Japan)
  3. Physical Chemistry of Luminescent Materials, Claude Bernard/Lyon1 University, Villeurbanne 69622 (France)

Single crystals of (Yb {sub x}Gd{sub 1-x}){sub 3}Ga{sub 5}O{sub 12} (0.0 {<=} x {<=} 1.0) have been grown by the micro-pulling-down method. Formation of continuous solid solutions with a garnet structure was confirmed. Composition dependence of the lattice constant, thermal diffusivity, specific heat capacity and thermal conductivity was investigated. Assignment of the Yb{sup 3+}-energy levels in Gd{sub 3}Ga{sub 5}O{sub 12}-host lattice has been performed by using absorption, emission and Raman spectroscopy measurements at both, room temperature and at 12 K.

OSTI ID:
20900945
Journal Information:
Materials Research Bulletin, Vol. 42, Issue 1; Other Information: DOI: 10.1016/j.materresbull.2006.05.010; PII: S0025-5408(06)00210-8; Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
Country of Publication:
United States
Language:
English