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Title: Structural and Morphological Difference Between Ti/TiN/TiCN Coatings Grown in Multilayer and Graded Form

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.2405945· OSTI ID:20898810
; ; ; ;  [1];  [2]
  1. Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Campus La Nubia, Manizales (Colombia)
  2. Departamento de Fisica, Universidad Nacional de Colombia Sede Bogota, Av. Cra. 30 No. 45-03, Bogota (Colombia)

Thin films can be grown in super-lattice, multilayers and graded form, having each one advantages and disadvantages. The difference between multilayer and graded coatings is the interface. In multilayers the interface is abrupt and in graded coatings it is diffuse. The interface influences many chemical and physical properties of the materials, and its choice depends on the application. Graded coatings have the advantage of having gradual properties such as thermal expansion coefficient and lattice parameter, avoiding adherence problems due to good match between their component materials. In this work the comparison between some properties of coatings grown as multilayer and graded is performed. The materials are produced using the sputtering DC technique because of its facility to control the deposition parameters and generate a slow growth. The target is a disc of titanium and the samples are made of stainless steel 304. The working gases are argon, nitrogen and methane, which are mixed according to the material to be produced, i.e. Ti layer is grown with argon, the TiN film is produced with a mixture of argon and nitrogen, and the TiCN material is obtained mixing argon, nitrogen and methane. These materials are characterized with AFM in order to determine grain size and with XPS studying the chemical composition and performing depth profiles.

OSTI ID:
20898810
Journal Information:
AIP Conference Proceedings, Vol. 875, Issue 1; Conference: 16. IAEA technical meeting on research using small fusion devices; 11. Latin American workshop on plasma physics, Mexico City (Mexico), 30 Nov - 3 Dec 2005; 5-9 Dec 2005; Other Information: DOI: 10.1063/1.2405945; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English