Structure and electrical transport properties of pure and Li{sub 2}O-doped CuO/MgO solid solution
- Department of Physical Chemistry, National Research Center, Dokki, Cairo (Egypt)
- Physics Division, Electron Microscopy and Thin Film Laboratory, National Research Center, Dokki, Cairo (Egypt)
The different electrical properties, {sigma}, {epsilon}', tan {delta} and E {sub {sigma}} of pure and Li{sub 2}O-doped CuO/MgO solid solution were investigated. The mole fraction of CuO (MF) was varied between 0.048 and 0.2. Pure and doped samples were subjected to heat treatments at 673 and 1073 K. The results revealed that the amount of CuO dissolved in MgO lattice increases progressively by increasing the MF as evidenced from the progressive decrease in the intensity of all diffraction lines of undissolved CuO phase. The dissolution process of copper ions in MgO lattice was accompanied by progressive increase in its lattice parameter. This process being conducted at 1073 K was accompanied by a significant progressive increase in the values of {sigma}, {epsilon}' and tan {delta} with subsequent decrease in the value of E {sub {sigma}}. The increase in the MF value of CuO from 0.048 to 0.2 led to a significant increase in the value of {sigma} {sub DC}, measured at room temperature, from 6.33 x 10{sup -12} to 9.9 x 10{sup -10} {omega}{sup -1} cm{sup -1} and E {sub {sigma}} decreases from 0.76 to 0.58 eV. Li{sub 2}O doping of the investigated system followed by calcination at 1073 K resulted in a measurable increase in values of {sigma}, {epsilon}' and tan {delta} with subsequent decrease in E {sub {sigma}}. These results were discussed in the light of the possible effective increase in the charge carriers concentration (Cu{sup 2+}ions dissolved in MgO lattice) and also to an effective increase in mobility of these charge carriers by Li{sub 2}O doping.
- OSTI ID:
- 20889777
- Journal Information:
- Materials Research Bulletin, Vol. 40, Issue 6; Other Information: DOI: 10.1016/j.materresbull.2005.03.006; PII: S0025-5408(05)00085-1; Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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