Molecular dynamics study on Ar ion bombardment effects in amorphous SiO{sub 2} deposition processes
- Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 464-8603, Japan and Nippon Sheet Glass Co., 1 Kaidoshita, Konoike, Itami Hyogo 664-8520 (Japan)
Argon ion bombardment effects on growing amorphous SiO{sub 2} films during reactive sputtering deposition processes were examined based on molecular dynamics (MD) and Monte Carlo (MC) simulation techniques. The system we have considered here is a film that is subject to energetic Ar bombardment while it is formed by surface reactions of Si and O atoms separately supplied at low kinetic energies. It has been found that (1) Ar injections preferentially sputter O atoms from the surface over Si and (2) also have a compressing effect on the growing film during the deposition process. In other words, our MD/MC simulations have demonstrated at the atomic level that, with higher energy Ar injections, an amorphous SiO{sub 2} film grown in a reactive sputtering deposition process is denser and more Si rich.
- OSTI ID:
- 20884936
- Journal Information:
- Journal of Applied Physics, Vol. 100, Issue 12; Other Information: DOI: 10.1063/1.2401651; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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