Single phase formation of Co-implanted ZnO thin films by swift heavy ion irradiation: Optical studies

Journal Article · Fri Dec 01 00:00:00 EST 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2399893· OSTI ID:20884914

Kumar, Ravi; Singh, Fouran; Angadi, Basavaraj; Choi, Ji-Won; Choi, Won-Kook; Jeong, Kwangho; Song, Jong-Han; Khan, M Wasi; Srivastava, J P; Kumar, Ajay; Tandon, R P ^[1]

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1. Materials Science Division, Inter-University Accelerator Centre, P.O. Box 10502, Aruna Asaf Ali Marg, New Delhi 110067 (India)

Low temperature photoluminescence and optical absorption studies on 200 MeV Ag{sup +15} ion irradiated Co-implanted ZnO thin films were studied. The Co clusters present in as implanted samples were observed to be dissolved using 200 MeV Ag{sup +15} ion irradiation with a fluence of 1x10{sup 12} ions/cm{sup 2}. The photoluminescence spectrum of pure ZnO thin film was characterized by the I{sub 4} peak due to the neutral donor bound excitons and the broad green emission. The Co-doped ZnO films show three sharp levels and two shoulders corresponding to 3t{sub 2g} and 2e{sub g} levels of crystal field splitted Co d orbitals, respectively. The ultraviolet-visible absorption spectroscopy also shows the systematic variation of band gap after 200 MeV Ag{sup +15} ion irradiation.

• OSTI ID: 20884914
• Journal Information: Journal of Applied Physics, Vol. 100, Issue 11; Other Information: DOI: 10.1063/1.2399893; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTRA
ABSORPTION SPECTROSCOPY
COBALT
CRYSTAL FIELD
DOPED MATERIALS
EPITAXY
EXCITONS
FERROMAGNETIC MATERIALS
HEAVY IONS
ION BEAMS
IRRADIATION
MEV RANGE 100-1000
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
SILVER IONS
THIN FILMS
ULTRAVIOLET RADIATION
ULTRAVIOLET SPECTRA
VISIBLE SPECTRA
ZINC OXIDES