Swift heavy ion irradiation of a-Si/Fe/c-Si trilayers
- II. Physikalisches Institut and SFB 602, Universitaet Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany)
Si/Fe/Si trilayers, with 12 nm amorphous Si and 45 nm polycrystalline Fe films deposited on Si(100) wafers, were irradiated with 350 MeV Au{sup 26+} ions at fluences of (0.6-11.3)x10{sup 14} ions/cm{sup 2}. The ion-induced modifications of their structural and magnetic properties were characterized by means of Rutherford backscattering, glancing angle x-ray diffractometry, and the magneto-optical Kerr effect. The mixing rate at the upper a-Si/Fe interface was three times as high as that at the lower Fe/c-Si interface. A simple formula is proposed, which on the basis of (nuclear) thermal-spike mixing reproduces the observed (electronic) mixing rates. Ion irradiation at a moderate fluence (6.7x10{sup 14}/cm{sup 2}) induced a magnetic anisotropy in the sample, which was magnetically isotropic after deposition. At the highest fluence, full interface mixing occurred and the magnetic anisotropy almost disappeared. The results are compared with those obtained in Fe/Si and Ni/Si bilayers ion irradiated in the regimes of nuclear and electronic stopping.
- OSTI ID:
- 20884686
- Journal Information:
- Journal of Applied Physics, Vol. 100, Issue 5; Other Information: DOI: 10.1063/1.2335984; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ANISOTROPY
DEPOSITION
FERROMAGNETIC MATERIALS
GOLD IONS
HEAVY IONS
ION BEAMS
IRON
IRRADIATION
KERR EFFECT
MAGNETIC PROPERTIES
MAGNETO-OPTICAL EFFECTS
MEV RANGE 100-1000
MIXING
MULTICHARGED IONS
POLYCRYSTALS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
THERMAL SPIKES
X-RAY DIFFRACTION