Optimized growth of lattice-matched In{sub x}Al{sub 1-x}N/GaN heterostructures by molecular beam epitaxy
- Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (United States)
The authors present a systematic study on the growth of the ternary compound In{sub x}Al{sub 1-x}N by molecular beam epitaxy. This work concentrates on In mole fractions x around 0.17, as this composition is in-plane lattice matched to GaN. At a growth temperature of 540 degree sign C, high quality material was obtained using a total metal to nitrogen flux ratio of {approx}1. Using these growth parameters, high quality GaN/InAlN superlattices were obtained without growth interruptions.
- OSTI ID:
- 20883266
- Journal Information:
- Applied Physics Letters, Vol. 90, Issue 2; Other Information: DOI: 10.1063/1.2430940; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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