Formation of Si nanocrystals utilizing a Au nanoscale island etching mask
Journal Article
·
· Materials Research Bulletin
- Quantum-Functional Semiconductor Research Center and Department of Physics, Dongguk University, 3-26, Pildong, Chungku, Seoul 100-715 (Korea, Republic of)
- Division of Electrical and Computer Engineering, Advanced Semiconductor Research Center, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of)
- Department of Semiconductor Science, Woosuk University, Jeonbok 565-701 (Korea, Republic of)
- Electrical Engineering Department, Device Research Laboratory, University of California, Los Angeles, CA 90095-1594 (United States)
Si nanocrystals were formed by using a Au nanoscale island etching mask. A high-resolution transmission electron microscopy image showed that the Si nanocrystals were created on a SiO{sub x} layer, and the luminescence peak related to Si nanocrystals was observed in the cathodoluminescence spectrum. Capacitance-voltage measurements demonstrate a metal-insulator-semiconductor behavior with a flatband voltage shift for the Al/SiO{sub 2}/nanocrystalline Si/SiO{sub 2}/p-Si structures, indicative of the existence of the Si nanocrystals embedded into the SiO{sub x} layer. These results indicate that Si nanocrystals embedded into the SiO{sub x} layer can be formed by using a Au island etching mask.
- OSTI ID:
- 20883102
- Journal Information:
- Materials Research Bulletin, Vol. 40, Issue 1; Other Information: DOI: 10.1016/j.materresbull.2004.06.019; PII: S0025-5408(04)00271-5; Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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