Pulsed electrodeposition and characterization of molybdenum diselenide thin film

Journal Article · Tue Jan 04 00:00:00 EST 2005 · Materials Research Bulletin

DOI:https://doi.org/10.1016/j.materresbull.2004.09.008· OSTI ID:20883096

Delphine, S Mary ^[1]; Jayachandran, M ^[2]; Sanjeeviraja, C ^[3]

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1. Department of Physics, Holy Cross College, Nagercoil 629004 (India)
2. Electrochemical Materials Science Division, Central Electrochemical Research Institute, Karaikudi 630006 (India)
3. Department of Physics, Alagappa University, Karaikudi 630003 (India)

Molybdenum dichalcogenides are semiconductors with layered type structure, which can act as efficient electrodes in the realization of photoelectrochemical solar cells. The main advantage of this molybdenum diselenide (MoSe{sub 2}) semiconductor is the prevention of electrolyte corrosion because of the phototransitions involving non-bonding d-d orbital of the Mo atoms. Polycrystalline molybdenum diselenide thin films are prepared by pulsed electrodeposition on conducting glass and titanium substrates in galvanostatic mode from an ammoniacal solution of H{sub 2}MoO{sub 4} and SeO{sub 2}. The growth kinetics of the film was studied and the deposition parameters such as electrolyte bath concentration, bath temperature, time of deposition, deposition current, pH of the electrolyte and duty cycle of the current are optimized. X-ray diffraction analysis of the as deposited and annealed films showed the presence of highly textured MoSe{sub 2} films with polycrystalline nature. EDAX spectrum of the surface composition confirms the nearly stoichiometric MoSe{sub 2} nature of the film. Surface morphology studies by scanning electron microscope (SEM) shows that the films are pinhole free and of device quality nature. The optical absorption spectra show an indirect band gap value of 1.16 eV. Conductivity measurements were carried out at different temperatures and electrical constants such as activation energy, trapped energy state and barrier height were calculated.

• OSTI ID: 20883096
• Journal Information: Materials Research Bulletin, Vol. 40, Issue 1; Other Information: DOI: 10.1016/j.materresbull.2004.09.008; PII: S0025-5408(04)00295-8; Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTRA
ACTIVATION ENERGY
ANNEALING
BONDING
CHEMICAL PREPARATION
CORROSION
ELECTRICAL PROPERTIES
ELECTRODEPOSITION
ELECTROLYTES
MOLYBDENUM
MOLYBDENUM SELENIDES
MORPHOLOGY
PH VALUE
POLYCRYSTALS
SCANNING ELECTRON MICROSCOPY
SELENIUM OXIDES
SEMICONDUCTOR MATERIALS
SOLAR CELLS
STOICHIOMETRY
SUBSTRATES
THIN FILMS
TITANIUM
X-RAY DIFFRACTION