Preparation and characterization of tin diselenide thin film by spray pyrolysis technique
- Department of Physics, V.H.N.S.N. College, Virudhunagar 626001 (India)
- Central Electrochemical Research Institute, Karaikudi 630006 (India)
- Department of Physics, Alagappa University, Karaikudi 630003 (India)
Tin diselenide (SnSe{sub 2}) thin film is deposited on to non-conducting glass substrate by spray pyrolysis technique at an optimized substrate temperature of 523 K. Hot probe method is used to identify the type of conductivity of the film to be an n-type semiconductor. X-ray diffraction study reveals the polycrystalline nature of the film with a preferential orientation growth. Spherical shaped grains with an average diameter of 233 nm are observed from the SEM photograph. The elemental composition on the surface of the film is analyzed with EDAX spectrum and formed almost in stoichiometric in composition. Room temperature resistivity of 1.27 x 10{sup 4} {omega} cm is determined using the linear four-probe method. Activation energy of 0.058 eV is determined by studying the variation of resistivity of the film with temperature. Optical absorption spectrum of this sprayed SnSe{sub 2} thin film is analyzed and found to have a direct allowed transition with a band gap of 1.48 eV.
- OSTI ID:
- 20883061
- Journal Information:
- Materials Research Bulletin, Vol. 39, Issue 14-15; Other Information: DOI: 10.1016/j.materresbull.2004.08.006; PII: S0025-5408(04)00267-3; Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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