III-VI compound semiconductor indium selenide (In{sub 2}Se{sub 3}) nanowires: Synthesis and characterization

Journal Article · Mon Dec 04 00:00:00 EST 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2388890· OSTI ID:20880133

Xuhui, Sun; Bin, Yu; Ng, Garrick; Nguyen, Thuc Dinh; Meyyappan, M ^[1]

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1. Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035 (United States)

The authors report the synthesis of one-dimensional indium selenide nanowire, a III-VI group compound semiconductor nanostructure with potential applications in data storage, solar cells, and optoelectronics. Nanoscale gold particles were used as catalysts and growth was also demonstrated using indium as self-catalyst. The growth mechanism is confirmed to be vapor-liquid-solid process by in situ heating experiments in which In and Se were found to diffuse back into the gold catalyst bead forming a Au-In-Se alloy that was molten at elevated temperatures. The morphology, composition, and crystal structure of the In{sub 2}Se{sub 3} nanowires (NWs) were analyzed by scanning electron microscopy, energy dispersive x-ray spectroscopy, and high-resolution transmission electron microscopy.

• OSTI ID: 20880133
• Journal Information: Applied Physics Letters, Vol. 89, Issue 23; Other Information: DOI: 10.1063/1.2388890; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CATALYSIS
CATALYSTS
CHEMICAL ANALYSIS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
GOLD
GOLD ALLOYS
INDIUM ALLOYS
INDIUM SELENIDES
MORPHOLOGY
QUANTUM WIRES
SCANNING ELECTRON MICROSCOPY
SELENIUM ALLOYS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SYNTHESIS
TRANSMISSION ELECTRON MICROSCOPY
VAPORS
X-RAY SPECTROSCOPY