Complementary analyses on the local polarity in lateral polarity-inverted GaN heterostructure on sapphire (0001) substrate

Journal Article · Mon Dec 04 00:00:00 EST 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2398924· OSTI ID:20880125

Katayama, Ryuji; Kuge, Yoshihiro; Onabe, Kentaro; Matsushita, Tomonori; Kondo, Takashi ^[1]

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1. Department of Advanced Materials Science, University of Tokyo, Chiba 277-8561 (Japan)

The fabrication of the lateral polarity-inverted GaN heterostructure on sapphire (0001) using a radio-frequency-plasma-enhanced molecular beam epitaxy is demonstrated. Its microscopic properties such as surface potentials, piezoelectric polarizations, and residual carrier densities were investigated by Kelvin force microscopy and micro-Raman scattering. The inversion from Ga polarity to N polarity in a specific domain and its higher crystal perfection had been unambiguously confirmed by these complementary analyses. The results were also fairly consistent with that of KOH etching, which suggests the applicability of these processes to the fabrication of photonic nanostructures.

• OSTI ID: 20880125
• Journal Information: Applied Physics Letters, Vol. 89, Issue 23; Other Information: DOI: 10.1063/1.2398924; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ATOMIC FORCE MICROSCOPY
CARRIER DENSITY
CRYSTAL GROWTH
DIELECTRIC MATERIALS
FABRICATION
GALLIUM NITRIDES
HETEROJUNCTIONS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
PIEZOELECTRICITY
PLASMA
POLARIZATION
POTASSIUM HYDROXIDES
RADIOWAVE RADIATION
RAMAN EFFECT
RAMAN SPECTRA
SAPPHIRE
SEMICONDUCTOR MATERIALS
SUBSTRATES
SURFACE POTENTIAL