Simultaneous formation of SiC and Si nanostructures on silicon by local ion implantation and electron beam annealing
Abstract
The authors demonstrate the fabrication of SiC nanocrystals on silicon by carbon ion implantation into silicon followed by electron beam annealing at 1000 deg. C. A continuous asymmetric, pyramidal ridge around 20 nm in height is observed at the boundary between the implanted and unimplanted regions. Adjacent to the ridge within the implanted region appears a trough which is continuous around the perimeter of the implanted/unimplanted boundary. The surface of the unimplanted region consists of pyramidal structures with an average height of 5-10 nm which cover the entire surface.
- Authors:
-
- National Isotope Centre, GNS Science, P.O. Box 31-312, Lower Hutt (New Zealand)
- Publication Date:
- OSTI Identifier:
- 20860998
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 89; Journal Issue: 15; Other Information: DOI: 10.1063/1.2361162; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ANNEALING; ASYMMETRY; CARBON IONS; CRYSTAL GROWTH; ELECTRON BEAMS; FABRICATION; ION IMPLANTATION; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS; SILICON; SILICON CARBIDES
Citation Formats
Markwitz, A, Johnson, S, and Rudolphi, M. Simultaneous formation of SiC and Si nanostructures on silicon by local ion implantation and electron beam annealing. United States: N. p., 2006.
Web. doi:10.1063/1.2361162.
Markwitz, A, Johnson, S, & Rudolphi, M. Simultaneous formation of SiC and Si nanostructures on silicon by local ion implantation and electron beam annealing. United States. https://doi.org/10.1063/1.2361162
Markwitz, A, Johnson, S, and Rudolphi, M. 2006.
"Simultaneous formation of SiC and Si nanostructures on silicon by local ion implantation and electron beam annealing". United States. https://doi.org/10.1063/1.2361162.
@article{osti_20860998,
title = {Simultaneous formation of SiC and Si nanostructures on silicon by local ion implantation and electron beam annealing},
author = {Markwitz, A and Johnson, S and Rudolphi, M},
abstractNote = {The authors demonstrate the fabrication of SiC nanocrystals on silicon by carbon ion implantation into silicon followed by electron beam annealing at 1000 deg. C. A continuous asymmetric, pyramidal ridge around 20 nm in height is observed at the boundary between the implanted and unimplanted regions. Adjacent to the ridge within the implanted region appears a trough which is continuous around the perimeter of the implanted/unimplanted boundary. The surface of the unimplanted region consists of pyramidal structures with an average height of 5-10 nm which cover the entire surface.},
doi = {10.1063/1.2361162},
url = {https://www.osti.gov/biblio/20860998},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 15,
volume = 89,
place = {United States},
year = {Mon Oct 09 00:00:00 EDT 2006},
month = {Mon Oct 09 00:00:00 EDT 2006}
}
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