Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing

Journal Article · Mon Sep 25 00:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2357563· OSTI ID:20860920

Nie, D; Mei, T; Xu, C D; Dong, J R ^[1]

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1. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

Inductively coupled argon plasma-enhanced intermixing of InAs/InP quantum dots grown on InP substrate is investigated. Intermixing is promoted by the near-surface defects generated by plasma exposure in annealing at a temperature of 600 deg. C for 30 s. The annealing results in a maximum differential band-gap blueshift of 106 nm but a thermal shift of only 10 nm. Band-gap halftones are obtained by controlling the amount of near-surface defects via wet chemical etching on the plasma-exposed InP cap layer. No degradation of quantum-dot crystal quality due to the process has been observed as evidenced by photoluminescence intensity.

• OSTI ID: 20860920
• Journal Information: Applied Physics Letters, Vol. 89, Issue 13; Other Information: DOI: 10.1063/1.2357563; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ARGON
CRYSTALS
ETCHING
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LAYERS
PHOTOLUMINESCENCE
PLASMA
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SPECTRAL SHIFT
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
TIME DEPENDENCE