Dynamics of Bimodal Growth in Pentacene Thin Films

Journal Article · Fri Sep 08 00:00:00 EDT 2006 · Physical Review Letters

DOI:https://doi.org/10.1103/PHYSREVLETT.97.105503· OSTI ID:20860792

Mayer, Alex C; Malliaras, George G ^[1]; Kazimirov, Alexander ^[2]

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1. Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States)
2. Cornell High Energy Synchrotron Source, Ithaca, New York 14853 (United States)

Previous studies have established that pentacene films deposited on silicon oxide consist of a substrate-induced 'thin-film' phase, with the bulk phase of pentacene detected in thicker films only. We show that the bulk phase nucleates as early as the first monolayer, and continues to nucleate as film growth progresses, shadowing the growth of the thin-film phase. Moreover, we find that the transition between the 'thin-film' and the bulk phase is not a continuous one, as observed in heteroepitaxial systems, but rather the two phases nucleate and grow independently.

• OSTI ID: 20860792
• Journal Information: Physical Review Letters, Vol. 97, Issue 10; Other Information: DOI: 10.1103/PhysRevLett.97.105503; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
PENTACENE
SILICON OXIDES
SUBSTRATES
THIN FILMS