Real-time monitoring of charge accumulation during pulse-time-modulated plasma
- Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
The authors investigated real-time monitoring of charge accumulation during pulse-time-modulated plasma processes by using their developed on-wafer monitoring chip. The charge accumulation potential between the top surface and the bottom in a SiO{sub 2} contact structure was measured during pulse-time-modulated plasma exposure with an on-wafer monitoring device. In conventional plasma with rf bias, the electron shading effect could be clearly observed as the potential difference between the wafer surface and the contact-hole bottom. Conversely, the accumulated charge in the pulse-time-modulated operation was drastically decreased. Time-resolved electron and ion flows to the SiO{sub 2} contact hole were clarified by the on-wafer monitoring. Accordingly, it was confirmed that the on-wafer monitoring is a very effective tool for investigating the local charge accumulation in actual device structures.
- OSTI ID:
- 20853805
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 24, Issue 6; Other Information: DOI: 10.1116/1.2362724; (c) 2006 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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