Hafnium silicide formation on Si(100) upon annealing

Journal Article · Tue Aug 15 00:00:00 EDT 2006 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.74.075319· OSTI ID:20853551

Siervo, A de ^[1]; Fluechter, C R; Weier, D; Schuermann, M; Dreiner, S; Westphal, C ^[1]; Carazzolle, M F; Pancotti, A; Landers, R; Kleiman, G G ^[2]

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1. Experimentelle Physik 1, Universitaet Dortmund, Otto-Hahn-Str. 4, D 44221 Dortmund (Germany)
2. Instituto de Fisica 'Gleb Wataghin', Universidade Estadual de Campinas, Caixa Postal 6165, 13083-970, Campinas, Sao Paulo (Brazil)

High dielectric constant materials, such as HfO{sub 2}, have been extensively studied as alternatives to SiO{sub 2} in new generations of Si based devices. Hf silicate/silicide formation has been reported in almost all literature studies of Hf based oxides on Si, using different methods of preparation. A silicate interface resembles close to the traditional Si/SiO{sub 2}. The silicate very likely forms a very sharp interface between the Si substrate and the metal oxide, and would be suitable for device applications. However, the thermal instability of the interfacial silicate/oxide film leads to silicidation, causing a dramatic loss of the gate oxide integrity. Despite the importance of the Hf silicide surface and interface with Si, only a few studies of this surface are present in the literature, and a structural determination of the surface has not been reported. This paper reports a study of the Hf silicide formation upon annealing by using a combination of XPS, LEED, and x-ray photoelectron diffraction (XPD) analyses. Our results clearly indicate the formation of a unique ordered Hf silicide phase (HfSi{sub 2}), which starts to crystallize when the annealing temperature is higher than 550 deg. C.

• OSTI ID: 20853551
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 74, Issue 7; Other Information: DOI: 10.1103/PhysRevB.74.075319; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CRYSTALLIZATION
ELECTRON DIFFRACTION
HAFNIUM
HAFNIUM OXIDES
HAFNIUM SILICIDES
INSTABILITY
INTERFACES
PERMITTIVITY
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
SUBSTRATES
SURFACES
THIN FILMS
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY