Charged and neutral defects in light-soaked a-Si:H
Book
·
OSTI ID:208145
- Kanazawa Univ. (Japan)
The defect density measured by electron spin resonance (ESR) is increased by 50 times by light soaking, while that measured by the Constant Photocurrent Method (CPM) is increased by only 4 times in N-doped a-Si:H. This large discrepancy between the CPM and ESR results is attributed to the presence of charged defects which are detected by the CPM but not by ESR. Light-induced ESR is though to be able to detect the charged defects, but quantitative analysis is difficult because whether an increase or decrease of the neutral defect density is observed under illumination depends on the ratio of charged and neutral defect densities, light intensity and the cross-section for charge trapping.
- OSTI ID:
- 208145
- Report Number(s):
- CONF-941203-; ISBN 0-7803-1459-X; TRN: IM9616%%473
- Resource Relation:
- Conference: 1. world conference on photovoltaic energy conversion, Waikoloa, HI (United States), 5-9 Dec 1994; Other Information: PBD: 1994; Related Information: Is Part Of 1994 IEEE first world conference on photovoltaic energy conversion: Conference record of the twenty fourth IEEE photovoltaic specialists conference -- 1994. Volume 1; PB: 1303 p.
- Country of Publication:
- United States
- Language:
- English
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