Investigation of current mechanisms in a-Si:H alloy solar cells
- Wayne State Univ., Detroit, MI (United States)
The characteristics of a-Si:H solar cells depend on their past histories, namely, voltage and light soaking times and thermal annealing. The effect of light soaking is known to reduce cell efficiencies at the 10% level. The details of the role of cell history on the basic current mechanisms are not well understood. The objective of this work is to identify the current mechanisms in I-V characteristics and elucidate their roles in cell stability. Commercial-grade single-junction cells with 0.35 cm{sup 2} active areas and 200, 500 and 800 nm thick intrinsic layers were the focus of the investigations. The cells were characterized with light and dark I-V measurements. The effects of temperature and annealing cycles were investigated. A parametric fitting model was used to quantify four current mechanisms under forward-bias conditions, namely, shunt and series resistances, current injection and depletion. The current mechanisms under reverse-bias conditions are not understood but have been characterized. The investigations show the greatest instability under forward-bias conditions occurs in the shunt resistance mechanism.
- OSTI ID:
- 208140
- Report Number(s):
- CONF-941203-; ISBN 0-7803-1459-X; TRN: IM9616%%468
- Resource Relation:
- Conference: 1. world conference on photovoltaic energy conversion, Waikoloa, HI (United States), 5-9 Dec 1994; Other Information: PBD: 1994; Related Information: Is Part Of 1994 IEEE first world conference on photovoltaic energy conversion: Conference record of the twenty fourth IEEE photovoltaic specialists conference -- 1994. Volume 1; PB: 1303 p.
- Country of Publication:
- United States
- Language:
- English
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