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Title: Introduction of Artificial Pinning Center into PLD-YBCO Coated Conductor on IBAD and Self-Epitaxial CeO2 Buffered Metal Substrate

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.2192416· OSTI ID:20800187
; ; ; ; ; ;  [1]; ;  [2];  [3]
  1. Superconductivity Research Laboratory, ISTEC, 2-4-1 Mutsuno, Atsuta-ku, Nagoya, 456-8587 (Japan)
  2. Materials R and D Laboratory, Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587 (Japan)
  3. Superconductivity Research Laboratory, ISTEC, 1-10-13 Shinonome, Koto-ku, Tokyo 135-0062 (Japan)

In order to fabricate YBa2Cu3O7-x (YBCO) coated conductors with high critical current density Jc in magnetic fields, we fabricated YBCO coated conductors with artificial pinning centers by the pulsed laser deposition (PLD) method on a self epitaxial PLD-CeO2 layer and ion-beam assisted deposition (IBAD)-Gd2Zr2O7 (GZO) buffered Hastelloy tape. Artificial pinning centers were introduced by the PLD deposition using the yttria-stabilized zirconia (YSZ) oxide target (nano-dot method) and YBCO target including YSZ particles (mixed target method). In the experiments using YSZ oxide target, YSZ nano-dots were observed. They were approximately 15 nm in height and 10 nm to 70 nm in diameter. We found that the density of nano-dots was controlled by the number of laser pulses. These samples exhibited higher Jc than YBCO films in magnetic fields. Furthermore, a similar improvement of Jc was observed in the experiments using YBCO target including YSZ particles. TEM observation revealed that columnar nano-structure made of BaZrO3 was formed during YBCO deposition and it was effective for pinning. We call this new epitaxial nano-structure 'bamboo structure' from its anisotropic growth and morphology.

OSTI ID:
20800187
Journal Information:
AIP Conference Proceedings, Vol. 824, Issue 1; Conference: Cryogenic engineering conference, Keystone, CO (United States), 29 Aug - 2 Sep 2005; Other Information: DOI: 10.1063/1.2192416; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English