Internal structure of copper(II)-phthalocyanine thin films on SiO{sub 2}/Si substrates investigated by grazing incidence x-ray reflectometry
- Institute of Mathematical and Physical Sciences, University of Wales Aberystwyth, Aberystwyth SY23 3BZ (United Kingdom)
The internal structure of copper(II)-phthalocyanine (CuPc) thin films grown on SiO{sub 2}/Si by organic molecular beam deposition has been studied by grazing incidence x-ray reflectometry (GIXR) and atomic force microscopy. The electronic density profile is consistent with a structure formed by successive monolayers of molecules in the {alpha} form with the b axis lying in the substrate surface plane. The authors present an electronic density profile model of CuPc films grown on SiO{sub 2}/Si. The excellent agreement between the model and experimental data allows postdeposition monitoring of the internal structure of the CuPc films with the nondestructive GIXR technique, providing a tool for accurate control of CuPc growth on silicon-based substrates. In addition, since the experiments have been carried out ex situ, they show that these structures can endure ambient conditions.
- OSTI ID:
- 20788016
- Journal Information:
- Journal of Applied Physics, Vol. 99, Issue 7; Other Information: DOI: 10.1063/1.2180399; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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