Sulfur incorporation into copper indium diselenide single crystals through annealing in hydrogen sulfide

Journal Article · Wed Feb 15 00:00:00 EST 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2162271· OSTI ID:20787880

Titus, Jochen; Birkmire, Robert W; Hack, Christina; Mueller, Georg; McKeown, Patrick ^[1]

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1. Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716 (United States)

CuInSe{sub 2} crystals were sulfurized in a H{sub 2}S-Ar gas mixture at 575 deg. C. The focus was on the resulting mass transport, in particular, on the interdiffusion of Se and S. Experiments were done for various sulfurization times, and the resulting S distribution was measured by Auger electron spectroscopy sputter depth profiling and analyzed with the Boltzmann-Matano method. A one-dimensional diffusion process had shaped the S distribution in these crystals. The respective diffusion coefficient was on the order of 10{sup -16} cm{sup 2}/s, and it varied only slightly with the S content in CuIn(Se,S){sub 2}.

• OSTI ID: 20787880
• Journal Information: Journal of Applied Physics, Vol. 99, Issue 4; Other Information: DOI: 10.1063/1.2162271; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
AUGER ELECTRON SPECTROSCOPY
COPPER
COPPER COMPOUNDS
DIFFUSION
HYDROGEN SULFIDES
INDIUM COMPOUNDS
MIXTURES
MONOCRYSTALS
ONE-DIMENSIONAL CALCULATIONS
SEMICONDUCTOR MATERIALS
SULFUR
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K