Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC
- Dipartimento di Fisica, Universita di Bologna, Viale Berti Pichat 6/2, 40127 Bologna (Italy)
The effects of low-temperature annealing in 8.2 MeV electron-irradiated 4H-SiC Schottky diodes were investigated. Deep-level transient spectroscopy and minority-carrier diffusion length (L{sub d}) measurements were carried out on not-irradiated samples and on irradiated samples before and after thermal treatments up to T=450 deg. C. We found that several deep levels in the upper half band gap (S1 with enthalpy E{sub T}=0.27 eV, S2 with E{sub T}=0.35 eV, S4 with E{sub T}=0.71 eV, and S5 with E{sub T}=0.96 eV) anneal out or modify at temperature values lower or equal to T=450 deg. C, whereby their progressive annealing out is accompanied by a net increase of L{sub d}, up to 50% of the value in the as-irradiated sample. We drew some conclusions regarding the microscopic nature of the defects related to the deep levels, according to their annealing behavior.
- OSTI ID:
- 20787869
- Journal Information:
- Journal of Applied Physics, Vol. 99, Issue 3; Other Information: DOI: 10.1063/1.2160708; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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