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Title: Study of Cu diffusion in porous dielectrics using secondary-ion-mass spectrometry

Abstract

Secondary-ion-mass spectrometry measurements were used to study Cu diffusion in porous silica. The total concentration of Cu{sup +} decreases with increasing porosity of the dielectric. This behavior is the combined result of both the chemistry and the morphology of the dielectric. The injection of Cu is triggered by outgassing of hydroxyl and water-related species from the dielectric; furthermore, the reduced available cross-sectional area of solid for diffusion, due to porosity, leads to reduced diffusion through the porous film. This suggests that surface diffusion does not play an important role in this process. The Cu{sup +} concentration at the Cu/dielectric interface is on the order of 10{sup 23} at./m{sup 3}, but decreases with time and exponentially with porosity, which suggests the occurrence of a chemical reaction at the interface. A model of molecular diffusion and ion drift that considers the porosity of the film is developed and the results are consistent with the experimental data.

Authors:
; ; ; ;  [1]
  1. Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
Publication Date:
OSTI Identifier:
20787723
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 98; Journal Issue: 12; Other Information: DOI: 10.1063/1.2149501; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BEAM INJECTION; CHEMICAL REACTIONS; COPPER IONS; DEGASSING; DIELECTRIC MATERIALS; DIFFUSION; EXPERIMENTAL DATA; HYDROXIDES; INTERFACES; ION DRIFT; ION MICROPROBE ANALYSIS; MASS SPECTRA; MASS SPECTROSCOPY; MORPHOLOGY; POROSITY; POROUS MATERIALS; SILICA; THIN FILMS

Citation Formats

Rodriguez, Oscar R, Gill, William N, Plawsky, Joel L, Tsui Ting, Y, Grunow, Stephan, and Silicon Technology Development, Texas Instruments, Inc., Dallas, Texas 75265. Study of Cu diffusion in porous dielectrics using secondary-ion-mass spectrometry. United States: N. p., 2005. Web. doi:10.1063/1.2149501.
Rodriguez, Oscar R, Gill, William N, Plawsky, Joel L, Tsui Ting, Y, Grunow, Stephan, & Silicon Technology Development, Texas Instruments, Inc., Dallas, Texas 75265. Study of Cu diffusion in porous dielectrics using secondary-ion-mass spectrometry. United States. https://doi.org/10.1063/1.2149501
Rodriguez, Oscar R, Gill, William N, Plawsky, Joel L, Tsui Ting, Y, Grunow, Stephan, and Silicon Technology Development, Texas Instruments, Inc., Dallas, Texas 75265. 2005. "Study of Cu diffusion in porous dielectrics using secondary-ion-mass spectrometry". United States. https://doi.org/10.1063/1.2149501.
@article{osti_20787723,
title = {Study of Cu diffusion in porous dielectrics using secondary-ion-mass spectrometry},
author = {Rodriguez, Oscar R and Gill, William N and Plawsky, Joel L and Tsui Ting, Y and Grunow, Stephan and Silicon Technology Development, Texas Instruments, Inc., Dallas, Texas 75265},
abstractNote = {Secondary-ion-mass spectrometry measurements were used to study Cu diffusion in porous silica. The total concentration of Cu{sup +} decreases with increasing porosity of the dielectric. This behavior is the combined result of both the chemistry and the morphology of the dielectric. The injection of Cu is triggered by outgassing of hydroxyl and water-related species from the dielectric; furthermore, the reduced available cross-sectional area of solid for diffusion, due to porosity, leads to reduced diffusion through the porous film. This suggests that surface diffusion does not play an important role in this process. The Cu{sup +} concentration at the Cu/dielectric interface is on the order of 10{sup 23} at./m{sup 3}, but decreases with time and exponentially with porosity, which suggests the occurrence of a chemical reaction at the interface. A model of molecular diffusion and ion drift that considers the porosity of the film is developed and the results are consistent with the experimental data.},
doi = {10.1063/1.2149501},
url = {https://www.osti.gov/biblio/20787723}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 12,
volume = 98,
place = {United States},
year = {Thu Dec 15 00:00:00 EST 2005},
month = {Thu Dec 15 00:00:00 EST 2005}
}