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Title: Role of nucleation in nanodiamond film growth

Abstract

Nanodiamond films were deposited using different microwave plasma chemical vapor deposition schemes following several nucleation pretreatment methods. The nucleation efficiency and the films structure were investigated using scanning and transmission electron microscopy and Raman spectroscopy. C{sub 2} dimer growth (CH{sub 4} and H{sub 2} in 90% Ar) cannot nucleate diamond and works only on existing diamond surfaces. The methyl radical process (up to 20% CH{sub 4} in H{sub 2}) allows some nucleation probability on appropriate substrates. Prolonged bias enhanced nucleation initiates both diamond nucleation and growth. C{sub 2} dimer growth results in pure nanodiamond free of amorphous carbon, while prolonged bias enhanced nucleation forms an amorphous carbon/nanodiamond composite.

Authors:
; ; ; ; ;  [1]
  1. Department of Materials Science and Solid State Institute, Technion-Israel Institute of Technology, Haifa 32000 (Israel) and Center of Super Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University Hong Kong, Hong Kong (China)
Publication Date:
OSTI Identifier:
20779408
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 88; Journal Issue: 24; Other Information: DOI: 10.1063/1.2213019; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DIAMONDS; DIMERS; HYDROGEN; METHANE; METHYL RADICALS; MICROWAVE RADIATION; NANOSTRUCTURES; NUCLEATION; PROBABILITY; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Lifshitz, Y, Lee, C H, Wu, Y, Zhang, W J, Bello, I, Lee, S T, and Center of Super Diamond and Advanced Films. Role of nucleation in nanodiamond film growth. United States: N. p., 2006. Web. doi:10.1063/1.2213019.
Lifshitz, Y, Lee, C H, Wu, Y, Zhang, W J, Bello, I, Lee, S T, & Center of Super Diamond and Advanced Films. Role of nucleation in nanodiamond film growth. United States. https://doi.org/10.1063/1.2213019
Lifshitz, Y, Lee, C H, Wu, Y, Zhang, W J, Bello, I, Lee, S T, and Center of Super Diamond and Advanced Films. 2006. "Role of nucleation in nanodiamond film growth". United States. https://doi.org/10.1063/1.2213019.
@article{osti_20779408,
title = {Role of nucleation in nanodiamond film growth},
author = {Lifshitz, Y and Lee, C H and Wu, Y and Zhang, W J and Bello, I and Lee, S T and Center of Super Diamond and Advanced Films},
abstractNote = {Nanodiamond films were deposited using different microwave plasma chemical vapor deposition schemes following several nucleation pretreatment methods. The nucleation efficiency and the films structure were investigated using scanning and transmission electron microscopy and Raman spectroscopy. C{sub 2} dimer growth (CH{sub 4} and H{sub 2} in 90% Ar) cannot nucleate diamond and works only on existing diamond surfaces. The methyl radical process (up to 20% CH{sub 4} in H{sub 2}) allows some nucleation probability on appropriate substrates. Prolonged bias enhanced nucleation initiates both diamond nucleation and growth. C{sub 2} dimer growth results in pure nanodiamond free of amorphous carbon, while prolonged bias enhanced nucleation forms an amorphous carbon/nanodiamond composite.},
doi = {10.1063/1.2213019},
url = {https://www.osti.gov/biblio/20779408}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 24,
volume = 88,
place = {United States},
year = {Mon Jun 12 00:00:00 EDT 2006},
month = {Mon Jun 12 00:00:00 EDT 2006}
}