Crystalline ternary rare earth oxide with capacitance equivalent thickness below 1 nm for high-K application
- Institute of Electronic Materials and Devices, University of Hannover, Appelstrasse 11A, D-30167 Hannover (Germany)
Ternary neodymium-gadolinium oxide (NGO) thin films were grown epitaxially on Si(001) substrates using modified molecular beam epitaxy. The electrical properties of NGO thin films demonstrate that this ternary oxide could be one of the most promising candidates to replace the conventionally used SiO{sub 2} or SiO{sub x}N{sub y} in complementary metal oxide semiconductor devices. The films were characterized with various methods. The capacitance equivalent oxide thickness of 4.5 nm thin films extracted from capacitance-voltage (C-V) characteristics was 0.9 nm. For such films, leakage current density and the density of interface traps were 2.6x10{sup -4} A/cm{sup 2} at vertical bar V{sub g}-V{sub FBV} vertical bar=1 V and 1.4x10{sup 12}/cm{sup 2} eV{sup -1}, respectively.
- OSTI ID:
- 20779178
- Journal Information:
- Applied Physics Letters, Vol. 88, Issue 17; Other Information: DOI: 10.1063/1.2198518; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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