Individual {beta}-Ga{sub 2}O{sub 3} nanowires as solar-blind photodetectors

Journal Article · Mon Apr 10 00:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2193463· OSTI ID:20778906

Feng, P; Zhang, J Y; Li, Q H; Wang, T H ^[1]

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1. Micro-Nano Technologies Research Center, Hunan University, Changsha 410082 (China) and Institute of Physics, Chinese Academy of Science, Beijing 100080 (China)

Individual {beta}-Ga{sub 2}O{sub 3} nanowires as solar-blind photodetectors are investigated. The detectors show encouraging advantages to 254 nm light. The dark current is on the order of pA. The conductance of the nanowire increases by about three orders of magnitude under 254 nm ultraviolet illumination. The upper limits of the response and recovery time are 0.22 and 0.09 s, respectively. These results indicate that {beta}-Ga{sub 2}O{sub 3} nanowires have potential applications in realizing future miniaturized solar-blind photodetectors.

• OSTI ID: 20778906
• Journal Information: Applied Physics Letters, Vol. 88, Issue 15; Other Information: DOI: 10.1063/1.2193463; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
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PHOTODETECTORS
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