High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001)

Journal Article · Mon Mar 20 00:00:00 EST 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2188040· OSTI ID:20778858

Yuanli, Wang; Jin, P; Ye, X L; Zhang, C L; Shi, G X; Li, R Y; Chen, Y H; Wang, Z G ^[1]

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1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

Highly uniform InAs quantum wires (QWRs) have been obtained on the In{sub 0.5}Al{sub 0.5}As buffer layer grown on the InP substrate 8{sup (convolutionsign)} off (001) towards (111) by molecular-beam epitaxy. The quasi-periodic composition modulation was spontaneously formed in the In{sub 0.5}Al{sub 0.5}As buffer layer on this misoriented InP (001). The width and period of the In-rich bands are about 10 and 40 nm, respectively. The periodic In-rich bands play a major role in the sequent InAs QWRs growth and the InAs QWRs are well positioned atop In-rich bands. The photoluminescence (PL) measurements showed a significant reduction in full width at half maximum and enhanced PL efficiency for InAs QWRs on misoriented InP(001) as compared to that on normal InP(001)

• OSTI ID: 20778858
• Journal Information: Applied Physics Letters, Vol. 88, Issue 12; Other Information: DOI: 10.1063/1.2188040; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
BUFFERS
CRYSTAL GROWTH
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LAYERS
MOLECULAR BEAM EPITAXY
PERIODICITY
PHOTOLUMINESCENCE
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SUBSTRATES