Selective plasma etching of ZrO{sub x} to Si using inductively coupled BCl{sub 3}/C{sub 4}F{sub 8} plasmas
- Department of Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyunggi-do, 440-746 (Korea, Republic of)
In this study, the etch characteristics of ZrO{sub x} and the etch selectivity to Si were investigated using BCl{sub 3}/C{sub 4}F{sub 8} plasmas. The etching mechanism was also investigated. Increasing the C{sub 4}F{sub 8} percentage to 4% formed a C-F polymer layer on the silicon surface due to the increased flux ratio of CF{sub x}/F to the substrate, while no such C-F polymer was formed on the ZrO{sub x} surface due to the removal of carbon from CF{sub x} by the oxygen in ZrO{sub x}. By using 3-4% C{sub 4}F{sub 8} in the BCl{sub 3}/C{sub 4}F{sub 8} mixture, infinite etch selectivity of ZrO{sub x} to silicon and photoresist could be obtained while maintaining the ZrO{sub x} etch rate above 400 A/min.
- OSTI ID:
- 20778763
- Journal Information:
- Applied Physics Letters, Vol. 88, Issue 9; Other Information: DOI: 10.1063/1.2180879; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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